QUANTUM THEORY OF REAL MATERIALS
Ouvrage 9780792396666 : QUANTUM THEORY OF REAL MATERIALS
Quantum Theory of Real Materials is a collection of articles by leading
researchers in condensed matter physics, highlighting recent advances in the
use of quantum theory to explain and predict the properties of real
materials.
Quantum Theory of Real Materials covers the many exciting
developments at the forefront of quantum theory of materials research. The
volume is divided into six major sections covering electronic structure and
quantum dynamics; semiconductors, insulators and metals; surfaces,
interfaces and clusters; materials under pressure; superconductivity; and
fullerenes, superhard materials and other novel materials.
Quantum Theory of Real Materials is an excellent resource for
researchers interested in learning about the most advanced discoveries in
quantum theory of materials and applying that knowledge in the laboratory.
Students will also find this volume to be a clear introduction and reference.
Contents and Contributors
Preface. I: Electronic Structure and Quantum Dynamics. 1. From First
Principles to Predictions of New Properties; J.C. Phillips. 2. Density
Functional Theory and Computational Materials Physics; L. Sham. 3.
Modeling Materials by Ab Initio Molecular Dynamics; R. Car. 4. Empirical
Pseudopotentials for Semiconductors; J.R. Chelikowsky. 5. Total Energy
Calculations of Solids Using Pseudopotentials; C. Hwang, et al. 6.
Quantum Monte Carlo Methods; S. Fahy. 7. Quasiparticle Theory of
Electron Excitations in Solids; S.G. Louie. 8. Ab Initio Statistical
Mechanics; J.D. Joannopoulos. 9. First Principles Molecular Dynamics
with Variable Cell Shape; R. Wentzcovitch. 10. New Approach to
Pseudopotential Construction; D. Hamann. II: Semiconductors,
Insulators and Metals. 11. Raman Scattering in Semiconductors with
Reduced Translational Invariance; M. Cardona. 12. New Prospective in
Molecular Beam Growth; M. Balkanski, et al. 13. First Principles and
Second Principles (Semiempirical) Pseudopotentials; A. Zunger. 14.
Microscopic Theory of the Properties of Semiconductor Heterojunctions;
M. Hybertsen. 15. Total Dielectric Function Treatment of Electron and
Phonon Response in Solids; D. Penn, et al. 16. Unusual Properties of
Impurities and Defects: Challenges and Opportunities; J. Chadi. 17.
Boltzmann Theory and Resistivity of Metals; P. Allen. III: Surfaces,
Interfaces and Clusters. 18. Origins and Consequences of Surface
Stress; D. Vanderbilt. 19. First Principles Quasiparticle Calculations for
Semiconductor Surfaces; J. Northrup. 20. Metal Surface Reconstructions;
C.T. Chan, K.M. Ho. 21. Shell Structure in Metal Clusters; M.Y. Chou.
22. Electronics Properties in Quantum Dots; C.Y. Fong, et al. 23.
Chemical Reactivity Theory for Physicists: A Work in Progress; M.H.
Cohen, et al. IV: Materials Under Pressure. 24. High Pressure Phase
Diagram of Silicon: A Model System in Condensed Matter Physics; G.
Martinez. 25. Charge Transfer Gap Closure in Transition Metal Halides
Under Pressure; A.L. Chen, P. Yu. 26. High Pressure Phases of
Semiconductors; K.J. Chang. 27. Metallic Hydrogen; T. Barbee. 28. Ab
Initio Pseudopotential Methods for Oxides: a-Quartz Near the Amorphous
Transition; N. Binggeli, J.R. Chelikowsky. V: Superconductivity. 29.
The Unusual High Temperature Superconductors:
HgBa2Can-1CunO2n+2+&dgr; with n=1,2,3,...; P. Chu. 30. Intercalating
High Tc Oxide Superconductors; A. Zettl, et al. 31. Regularities Among
the Classes of High Temperature Superconductors: Questions of Pressure;
W. Pickett, D.J. Singh. 32. Electronic Structure of Hole-Doped Copper
Oxides and a New Mechanism of High Temperature Superconductivity; H.
Kammura. VI: Fullerenes, Superhard Materials and other Novel
Materials. 33. Electronic Structure of Fullerenes and Fullerides; S. Saito.
34. Superconductivity in Alkali Fullerenes; J.L. Martins. 35. Photoemission
and Optical Properties of C60 Fullerites; E.L. Shirley, S.G. Louie. 36.
Predicting New Hard Materials; A. Liu. Index.
Auteur : CHELIKOWSKY
Editeur : KLUWER
Nombre de pages : 0
Date de publication : 02 1996
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